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Structure of the wa...
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Sagalowicz, LaurentInstitut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
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Structure of the wafer fused InP (001)-GaAs (001) interface
- Artikel/kapitelEngelska1997
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Informa UK Limited,1997
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LIBRIS-ID:oai:DiVA.org:kth-83027
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-83027URI
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https://doi.org/10.1080/095008397178887DOI
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Språk:engelska
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References: Amelinckx, S., (1956) Phil. Mag., 1, p. 269; Balluffi, R.W., Saas, S.L., Schober, T., (1972) Phil. Mag., 26, p. 585; Benamara, M., Rocher, A., Laporte, A., Sarrabayrousse, G., LescouzÚres, L., Peyrelavigne, A., (1995) Microscopy of Semiconducting Materials 1995, Inst. Phys. Conf. Ser., 146. , Bristol: Institute of Physics; Bollmann, W., (1970) Crystal Defects and Crystalline Interfaces, , Berlin: Springer-Verlag; Hirsch, P., Howie, A., Nicholson, R.B., Whelan, M.J., Pashley, D.W., (1965) Electron Microscopy of Thin Crystals, , New York: Krieger; Kang, J.M., Nouaoura, M., LassabatÚre, L., Rocher, A., (1994) J. Cryst. Growth, 143, p. 115; Komninou, P., Stoemenos, G., Dimitrakopoulos, G.P., Karakostas, T., (1994) J. Appl. Phys., 75, p. 143; Lo, Y.H., Bhat, R., Hwang, D.M., Koza, M.A., Lee, T.P., (1991) Appl. Phys. Lett., 58, p. 1961; Okuno, Y., Uomi, K., Aoki, M., Taniwatari, T., Susuki, M., Kondow, M., (1995) Appl. Phys. Lett., 66, p. 451; Patriarche, G., JeannÚs, F., Oudar, J.L., Glas, F., (1997) Microscopy of Semiconducting Materials 1997, Inst. Phys. Conf. Ser., 157. , (Bristol: Institute of Physics) (to be published); Ram, R.J., Dudley, J.J., Bowers, J.E., Yang, L., Carey, K., Rosner, S.J., Nauka, K., (1995) J. App. Phys., 78, p. 4227; Sagalowicz, L., Jouneau, P.H., Rudra, A., Syrbu, V., Kapon, E., (1997) Boundaries and Interfaces in Materials, TMS Conf. Proc., , (The Materials Society) (to be published); Salomonson, F., Streusel, K., Bentell, J., Hammar, M., Keiper, D., Westphalen, R., Piprek, J., Behrend, J., (1997) J. Appl. Phys., , in the press; Shieu, F.S., Saas, L., (1990) Acta Metall. Mater., 9, p. 1653; Syrbu, A.V., Fernandez, J., Behrend, J., Berseth, C.A., Carlin, J.F., Rudra, A., Kapon, E., (1997) Electron. Lett., 33, p. 866; Thomson, N., (1953) Proc. Phys. Soc. B, 66, p. 481; Wada, H., Ogawa, Y., Kamijoh, T., (1993) Appl. Phys. Lett., 62, p. 738; Zhu, J.G., Carter, C.B., (1990) Phil. Mag. A, 62, p. 319 NR 20140805
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A structural study of wafer fused InP-GaAs interfaces has been carried out. The geometry of the dislocation network which accommodates the twist and the lattice mismatch is first given using a geometrical approach. Cross-sectional transmission electron microscopy and plan view observations are presented. Two different misfit cases are observed. (1) When no twist is present, the 3.7% lattice mismatch is relaxed by a regular square network of dislocations with pure edge character. (2) When an additional twist is present, a square network of dislocations results as well but here the dislocations have a mixed character; 60° dislocations are also observed, some form closed defect circuits and others very likely accommodate a small tilt. The interaction between the 60° dislocations and the edge dislocations is explained in detail. Voids or inclusions are also observed as well as additional dislocations which may accommodate part of the thermal mismatch. © 1997 Taylor & Francis Ltd.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Rudra, Alok P.Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
(författare)
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Syrbu, Alexei V.Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
(författare)
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Behrend, J.Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
(författare)
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Salomonsson, FredrikKTH,Elektronik(Swepub:kth)PI0000000
(författare)
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Streubel, Klauss P.KTH,Elektronik(Swepub:kth)PI0000000
(författare)
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Hammar, Mattias,1961-KTH,Elektronik(Swepub:kth)u1jfzgcj
(författare)
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Bentell, JonasKTH,Elektronik(Swepub:kth)u1wsxmny
(författare)
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Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, SwitzerlandElektronik
(creator_code:org_t)
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Ingår i:Philosophical Magazine Letters: Informa UK Limited76:6, s. 445-4520950-08391362-3036
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