Sökning: onr:"swepub:oai:DiVA.org:kth-84195" >
EPITAXIAL SILICIDE ...
EPITAXIAL SILICIDE FORMATION IN THE MG/SI(111) SYSTEM
-
- Nyholm, R. (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,MAX IV Laboratory,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
- Andersen, J. N. (författare)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
NYHOLM, R (författare)
-
visa fler...
-
- KARLSSON, Ulf O (författare)
- KTH Royal Institute of Technology
-
visa färre...
-
(creator_code:org_t)
- Elsevier BV, 1993
- 1993
- Engelska.
-
Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 289:3, s. 290-296
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
https://lup.lub.lu.s...
-
visa färre...
Abstract
Ämnesord
Stäng
- The silicide formation has been studied in the Mg/Si(111) system by IOW energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the (2/3 square-root e x 2/3 square-root 3)R30-degrees reconstruction in this system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 +/- 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 +/- 0.1 eV below the Fermi level.
Ämnesord
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas