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Comparison of SiO2 and AlN as gate dielectric for SiC MOS structures
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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Harris, C. I. (författare)
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visa fler...
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Nordell, N. (författare)
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Wongchotigul, K. (författare)
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Spencer, M. G. (författare)
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visa färre...
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(creator_code:org_t)
- Trans Tech Publications Inc. 1998
- Engelska.
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 264-268, s. 877-880
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- The electrical properties of silicon dioxide (thermal oxidation) and aluminum nitride (metal organic chemical vapor deposition) have been compared for use as gate dielectric for silicon carbide metal insulator semiconductor structures. High frequency capacitance voltage measurements at room temperature were used to investigate fixed charge and deep interface states. The deep interface states could be passivated with hydrogen if introduced during growth of silicon dioxide. Although results are promising for aluminum nitride, the morphology of the films grown so far do not allow a fair comparison with silicon dioxide.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Aluminum Nitride
- Metal Organic Chemical Vapor Deposition
- Silicon Dioxide
- Thermal Oxidation
- Current voltage characteristics
- Dielectric films
- Electric charge
- Film growth
- Interfaces (materials)
- Metallorganic chemical vapor deposition
- Morphology
- Nitrides
- Semiconductor device structures
- Silica
- Thermooxidation
- Gate dielectrics
- MOS devices
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)