UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

• MOS capacitors using wet thermal oxidation of p-type 4H and 6H silicon carbide have been investigated using capacitance-voltage (CV) measurements. The interface state density was determined from displacements in the CV curves at room temperature after optical generation of carriers. Forming gas annealing at 400 °C after metallization was found to reduce the amount of deep interface states, and in combination with UV-ozone precleaning of the SiC substrates in a commercial system, the fixed oxide charge was also reduced.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Annealing

Capacitance measurement

Charge carriers

Interfaces (materials)

Silicon carbide

Thermooxidation

Ultraviolet radiation

Voltage measurement

Ultraviolet ozone precleaning

Semiconducting silicon compounds

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)