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Towards ferroelectr...
Towards ferroelectric field effect transistors in 4H-silicon carbide
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Koo, S. -M (författare)
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Khartsev, S. I. (författare)
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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Grishin, Alexander. M. (författare)
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Boston, MA, 2002
- 2002
- Engelska.
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Ingår i: Materials Research Society Symposium - Proceedings. - Boston, MA. ; , s. 371-379
- Relaterad länk:
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http://www.scopus.co...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- We report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr = 14.2 ΌC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan Ύ ∌ 0.0007 at 12 V, 400 kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∌ 9 eV) barrier buffer layer between PZT (Eg ∌ 3.5 eV) and SiC (Eg ∌ 3.2 eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Ferroelectricity
- Field effect transistors
- Hysteresis
- Microelectronics
- Oxides
- Thin films
- Ferroelectric oxides
- Silicon carbide
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)