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High performance Si...
High performance SiGeC HBT technology for radio frequency applications
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Haralson, Erik (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Malm, Gunnar, 1972- (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2004
- 2004
- Engelska.
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Ingår i: 2004 Asia-Pacific Radio Science Conference - Proceedings. ; , s. 480-483
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this paper, the current status of SiGeC bipolar technologies for high-speed and wireless applications is reviewed. The key process features and radio frequency (RF) performance of advanced SiGe bipolar processes are summarized. The different approaches to form a self-aligned base-emitter structure with minimum parasitics are discussed. SiGe:C epitaxy allows very good profile control of the narrow base doping peak, which enables cut-off frequencies above 300 GHz. Downscaling of device dimensions for improved RF performance is also investigated using TCAD simulations. Finally, novel device structures using SOI substrates are discussed.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- 300 GHz; HBT technology; SOI substrates; SiGe:C; TCAD; device dimension downscaling; epitaxy; high-speed bipolar processes; narrow base doping peak profile control; parasitics minimization; radio frequency devices; self-aligned base-emitter structure; Ge-Si alloys; carbon; doping profiles; epitaxial growth; heterojunction bipolar transistors; semiconductor materials; silicon-on-insulator; submillimetre wave transistors; technology CAD (electronics)
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)