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Epitaxial lateral o...
Epitaxial lateral overgrowth of InP in micro line and submicro mesh openings
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- Olsson, Fredrik (författare)
- KTH,Halvledarmaterial, HMA
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- Xie, Mengyao (författare)
- KTH,Halvledarmaterial, HMA
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- Gerard, F. (författare)
- Instituto de Microelectronica de Madrid (CSIC)
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- Alija, A. R. (författare)
- Instituto de Microelectronica de Madrid (CSIC)
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- Prieto, I. (författare)
- Instituto de Microelectronica de Madrid (CSIC)
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- Postigo, P. A. (författare)
- Instituto de Microelectronica de Madrid (CSIC)
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- Lourdudoss, Sebastian (författare)
- KTH,Halvledarmaterial, HMA
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(creator_code:org_t)
- 2007
- 2007
- Engelska.
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Ingår i: 2007 International Conference on Indium Phosphide and Related Materials. ; , s. 311-314
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mu m long and 10 gm wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 gm thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Epitaxial growth
- Photoluminescence
- Silicon
- Temperature measurement
- Epitaxial lateral overgrowth
- Submicro mesh structures
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)