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Formation of Ni mon...
Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts
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- Isheden, Christian (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Seger, Johan (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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visa fler...
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- Zhang, Shi-Li (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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visa färre...
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Materials Research Society Symposium Proceedings. - 0272-9172 .- 1946-4274. ; 745, s. 117-122
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- The formation of Ni germanosilicides during solid-state interaction between Ni and heavily B-doped strained epitaxial Si1-xGex films with x=0.18, 0.32 and 0.37 is studied. No NiSi2 is found in these samples even after annealing at 850 degreesC, which can be compared to the formation of NiSi2 at 750 T on Si(I 00). Resistance and diffraction studies for the Si0.82Ge0.18 sample indicate that NiSi0.82Ge0.18 forms and the NiSi0.82Ge0.18/Si0.82Ge0.18 structure is stable from 400 to 700 degreesC. For the NiSi1-uGeu formed in all Si1-xGex samples, where u can be different from x, a strong film texturing is observed. When the Ge fraction is increased from 18 at.% to 32-37 at.%, the morphological stability of the film is degraded and a substantial increase in sheet resistance occurs already at 600 degreesC. The contact resistivity for the NiSi0.8Ge0.2/Si0.8Ge0.2 interface formed at 550 T is determined as 1.2x10(-7) Omegacm(2), which satisfies the ITRS contact resistivity requirement for the 70 nm technology node.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Electric contacts
- Electric resistance
- Epitaxial growth
- Rapid thermal annealing
- Semiconducting films
- Semiconductor doping
- Semiconductor junctions
- X ray diffraction analysis
- Sheet resistance
- Silicidation
- Electronics
- Elektronik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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