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Silicide as diffusi...
Silicide as diffusion source for dopant segregation in 70-nm MOSFETs with PtSi Schottky-barrier source/drain on ultrathin-body SOI
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- Qiu, Zhijun (författare)
- KTH,Integrerade komponenter och kretsar
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- Zhang, Zuhua (författare)
- KTH,Integrerade komponenter och kretsar
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Lu, J. (författare)
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Liu, R. (författare)
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Zhang, Shi-Lin (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- NEW YORK : IEEE, 2008
- 2008
- Engelska.
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Ingår i: ULIS 2008. - NEW YORK : IEEE. ; , s. 23-26
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this paper, dopant segregation (DS) method is adopted to enhance device performance of PtSi-based Schottky-barrier source/drain MOSFETs (SB-MOSFETs) fabricated on ultrathin silicon-on-insulator. The DS formation is realized by means of Silicide As Diffusion Source. Without DS treatment, the devices are typically p-type, but with a rather large electron branch at positive gate bias. Dopant segregation with As is found to turn the devices to well-performing n-MOSFETs, and DS with B to greatly enhance the hole conduction in the p-MOSFETs. A large threshold voltage (V-t) shift is however observed in the p-MOSFET due to B lateral spread caused during the drive-in process for the DS formation. By reducing the drive-in temperature, this problem is partially addressed with a smaller V-t shift and a much better control of short channel effect.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Schottky-barrier MOSFET
- dopant segregation
- threshold voltage
- SADS
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)