Damage accumulation and annealing behavior in high fluence implanted MgZnO

• Molecular beam epitaxy grown MgxZn1-xO (x <= 0.3) layers were implanted at room temperature with 150 keV Er-166(+) ions in a fluence range of 5 x 10(15-)3 x 10(16) cm(-2). Evolution of ion-induced damage and structural changes were studied by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis and time-of-flight elastic recoil detection analysis. Results show that damage production enhances in both Zn- and O-sublattices with increasing the Mg content in the MgZnO. However, MgZnO as well as pure ZnO exhibits a high degree of dynamic annealing and MgZnO can not be amorphized even at the highest ion fluence used. Annealing of heavily damaged ZnO leads to a strong surface erosion and thinning of the film. Increasing the Mg content suppresses the surface evaporation in high fluence implanted MgZnO but leads to a strong surface decomposition accompanied with a Mg-rich surface layer formation during post-implantation annealing.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Ion implantation

Damage

Annealing

MgZnO

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