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Electrically and Me...
Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers
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- Falk, Abram L. (författare)
- University of Chicago, IL 60637 USA University of Calif Santa Barbara, CA 93106 USA
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- Klimov, Paul V. (författare)
- University of Chicago, IL 60637 USA University of Calif Santa Barbara, CA 93106 USA
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- Buckley, Bob B. (författare)
- University of Calif Santa Barbara, CA 93106 USA
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- Ivády, Viktor (författare)
- Linköpings universitet,Teoretisk Fysik,Tekniska högskolan
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- Abrikosov, Igor (författare)
- Linköpings universitet,Teoretisk Fysik,Tekniska högskolan
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- Calusine, Greg (författare)
- University of Calif Santa Barbara, CA 93106 USA
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- Koehl, William F. (författare)
- University of Chicago, IL 60637 USA University of Calif Santa Barbara, CA 93106 USA
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- Gali, Adam (författare)
- Hungarian Academic Science, Hungary Budapest University of Technology and Econ, Hungary
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- Awschalom, David D. (författare)
- University of Chicago, IL 60637 USA University of Calif Santa Barbara, CA 93106 USA
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(creator_code:org_t)
- American Physical Society, 2014
- 2014
- Engelska.
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 112:18, s. 187601-
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.
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- TECHNOLOGY
- TEKNIKVETENSKAP
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