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Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
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- Kakanakova-Gueorguie, Anelia (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Nilsson, Daniel (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Trinh, Xuan Thang (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Son, Nguyen Tien (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications Inc. 2014
- Engelska.
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Ingår i: Gettering and Defect Engineering in Semiconductor Technology XV. - : Trans Tech Publications Inc.. ; , s. 441-445
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The high-Al-content AlxGa1-xN alloys, xgreater than0.70, and AlN is the fundamental wide-band-gap material system associated with the technology development of solid-state LEDs operating at the short wavelengths in the deep-UV (lambda less than 280 nm). Yet, their properties are insufficiently understood. The present study is intended to bring elucidation on the long-time debated and much speculated Si transition from shallow donor in GaN to a localized deep DX defect in AlxGa1-xN alloys with increasing Al content. For that purpose electron paramagnetic resonance is performed on a particular selection of high-Al-content epitaxial layers of Al0.77Ga0.23N, alternatively Al0.72Ga0.28N, alloy composition.
Nyckelord
- AlGaN; MOCVD; Si doping; electron paramagnetic resonance
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)