Sökning: onr:"swepub:oai:DiVA.org:liu-108498" > Buffer-enhanced ele...
Fältnamn | Indikatorer | Metadata |
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000 | 02757naa a2200373 4500 | |
001 | oai:DiVA.org:liu-108498 | |
003 | SwePub | |
008 | 140628s2013 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1084982 URI |
024 | 7 | a https://doi.org/10.1016/j.orgel.2012.11.0172 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Sun, Zhengyi,d 1982-u Fudan University, Shanghai, China4 aut0 (Swepub:liu)zhesu73 |
245 | 1 0 | a Buffer-enhanced electron injection in organic light-emitting devices with copper cathode |
264 | 1 | a Amsterdam :b Elsevier,c 2013 |
338 | a print2 rdacarrier | |
520 | a We explore in this work the use of Cu as a cathode material in organic light-emitting devices (OLEDs) and find a dual electron–injection enhancement mechanism derived from the LiF layer. Different from what observed previously in Ag- and Au-cathode devices, the LiF buffer layer in the Cu-cathode OLEDs starts to play its role in performance improvement when it is much thinner than 3 nm, the optimal value of buffer thickness, and in the case of optimal thickness, the device exhibits excellent performance comparable to conventional Al-cathode device. The phenomenon observed is ascribed to enhanced electron injection as a result of combined effect of interfacial reaction and tunneling barrier reduction mechanism: while chemical reaction plays a key role at the very beginning of interface formation, tunneling dominates in the subsequent stage leading to the tremendous improvement of the characteristics. | |
650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
653 | a Interface modification; Cu cathode; Composited mechanism; Organic light-emitting devices; Energy level alignment | |
700 | 1 | a Ding, Xunminu Fudan University, Shanghai, China4 aut |
700 | 1 | a Ding, Baofuu Fudan University, Shanghai, China4 aut |
700 | 1 | a Gao, Xindongu Fudan University, Shanghai, China4 aut |
700 | 1 | a Hu, Yongmaou Fudan University, Shanghai, China4 aut |
700 | 1 | a Chen, Xiaoqingu Fudan University, Shanghai, China4 aut |
700 | 1 | a He, Yunu Fudan University, Shanghai, China4 aut |
700 | 1 | a Hou, Xiaoyuanu Fudan University, Shanghai, China4 aut |
710 | 2 | a Fudan University, Shanghai, China4 org |
773 | 0 | t Organic electronicsd Amsterdam : Elsevierg 14:2, s. 511-515q 14:2<511-515x 1566-1199x 1878-5530 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-108498 |
856 | 4 8 | u https://doi.org/10.1016/j.orgel.2012.11.017 |
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