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Raman spectroscopy ...
Raman spectroscopy of GaP/GaNP core/shell nanowires
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- Dobrovolsky, A. (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Sukrittanon, S. (författare)
- Grad Program Mat Science and Engn, CA 92093 USA
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- Kuang, Y. J. (författare)
- University of Calif San Diego, CA 92093 USA
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- Tu, C. W. (författare)
- University of Calif San Diego, CA 92093 USA
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- Chen, Weimin (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Buyanova, Irina (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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(creator_code:org_t)
- American Institute of Physics (AIP), 2014
- 2014
- Engelska.
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 105:19, s. 193102-
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm(-1) that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.
Ämnesord
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
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