Sökning: onr:"swepub:oai:DiVA.org:liu-114436" >
Copper diffusion into single-crystalline TiN studied by transmission electron microscopy and atom probe tomography
-
- Muehlbacher, Marlene (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan,University of Leoben, Austria
-
- Mendez-Martin, F. (författare)
- University of Leoben, Austria
-
- Sartory, B. (författare)
- Mat Centre Leoben Forsch GmbH, Austria
-
visa fler...
-
- Schalk, N. (författare)
- University of Leoben, Austria
-
- Keckes, J. (författare)
- University of Leoben, Austria; Austrian Academic Science, Austria
-
- Lu, Jun (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
- Hultman, Lars (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
- Mitterer, C. (författare)
- University of Leoben, Austria
-
visa färre...
-
(creator_code:org_t)
- Elsevier, 2015
- Engelska.
-
Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 574, s. 103-109
- Relaterad länk:
-
https://liu.diva-por... (primary) (Raw object)
-
visa fler...
-
http://liu.diva-port...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- TiN/Cu bilayers were grown by unbalanced DC magnetron sputter deposition on (001)-oriented MgO substrates. Pole figures and electron back-scatter diffraction orientation maps indicate that both layers in the as-deposited state are single-crystalline with a cube-on-cube epitaxial relationship with the substrate. This is confirmed by selected area electron diffraction patterns. To study the efficiency of the TiN barrier layer against in-diffusion of Cu, we annealed samples at 900 degrees C for 1 h in vacuum and at 1000 degrees C for 12 h in Ar atmosphere. The single-crystalline structure of the TiN layer is stable up to annealing temperatures of 1000 degrees C as shown by high resolution transmission electron microscopy. While no Cu diffusion was evident after annealing at 900 degrees C, scanning transmission electron microscopy images and energy-dispersive X-ray spectrometry maps show a uniform diffusion layer of about 12 nm after annealing at 1000 degrees C for 12 h. Concentration depth profiles obtained from 3D atom probe tomography reconstructions confirm these findings and reveal that the TiN film is slightly substoichiometric with a N/Ti ratio of 0.92. Considering this composition, we propose a lattice diffusion mechanism of Cu in TiN via the formation of Cu-N vacancy complexes. The excellent diffusion barrier properties of single-crystalline TiN are further attributed to the lack of fast diffusion paths such as grain boundaries.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- Titanium nitride; Copper; Diffusion; Transmission electron microscopy; Atom probe tomography
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)