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HVPE GaN substrates :
HVPE GaN substrates : growth and characterization
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- Gogova, D. (författare)
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany; Central Laboratory of Solar Energy and New Energy Sources at the Bulgarian Academy of Sciences, Blvd. Tzarigradsko shose 72, 1784 Sofia, Bulgaria
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- Siche, D. (författare)
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
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- Kwasniewski, A. (författare)
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
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- Schmidbauer, M. (författare)
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
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- Fornari, R. (författare)
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
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- Hemmingsson, Carl (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Central Laboratory of Solar Energy and New Energy Sources at the Bulgarian Academy of Sciences, Blvd. Tzarigradsko shose 72, 1784 Sofia, Bulgaria
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- Monemar, Bo (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany; Central Laboratory of Solar Energy and New Energy Sources at the Bulgarian Academy of Sciences, Blvd Tzarigradsko shose 72, 1784 Sofia, Bulgaria Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany (creator_code:org_t)
- 2010-07-20
- 2010
- Engelska.
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 7:7-8, s. 1756-1759
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- GaN substrates with low dislocation densities were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self-separation method was seen as advantageous, in comparison with the laser-induced lift-off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
Nyckelord
- GaN
- VPE
- structure
- XRD
- TEM
- photoluminescence
- Raman spectra
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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