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Photoluminescence s...
Photoluminescence study of p-type vs. n-type Ag-doped ZnO films
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- Myers, M. A. (författare)
- Texas AandM University, TX 77843 USA
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- Khranovskyy, Volodymyr (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Jian, J. (författare)
- Texas AandM University, TX 77843 USA
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- Lee, J. H. (författare)
- Texas AandM University, TX 77843 USA
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- Wang, Han (författare)
- Texas AandM University, TX 77843 USA; Texas AandM University, TX 77843 USA
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- Wang, Haiyan (författare)
- Texas AandM University, TX 77843 USA; Texas AandM University, TX 77843 USA
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(creator_code:org_t)
- American Institute of Physics (AIP), 2015
- 2015
- Engelska.
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 118:6, s. 065702-
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 degrees C and 750 degrees C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO. (C) 2015 AIP Publishing LLC.
Ämnesord
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
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- ref (ämneskategori)
- art (ämneskategori)
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