Sökning: onr:"swepub:oai:DiVA.org:liu-13274" >
Strain-symmetrized ...
Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
-
- Zhao, Ming (författare)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
-
- Karim, Amir (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
-
- Ni, Wei-Xin (författare)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
-
visa fler...
-
- Pidgeon, C. R. (författare)
- Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, UK
-
- Phillips, P. J. (författare)
- Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, UK
-
- Carder, D. (författare)
- Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, UK
-
- Murdin, B. N. (författare)
- Department of Physics, University of Surrey, UK
-
- Fromherz, T. (författare)
- Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, Linz, Austria
-
- Paul, D. J. (författare)
- Cavendish Laboratory, University of Cambridge, UK
-
visa färre...
-
(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- Engelska.
-
Ingår i: Journal of luminescence. - : Elsevier BV. - 0022-2313. ; 121:2, s. 403-408
- Relaterad länk:
-
http://urn.kb.se/res...
-
visa fler...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Three strain-symmetrized Si/SiGe multi-quantum well structures, designed for probing the carrier lifetime of intrawell intersubband transitions between heavy hole 1 (HH1) and light hole 1 (LH1) states with transition energies below the optical phonon energy, were grown by molecular beam epitaxy at low temperature on fully relaxed SiGe virtual substrates. The grown structures were characterized by using various experimental techniques, showing a high crystalline quality and very precise growth control. The lifetime of the LH1 excited state was determined directly with pump-probe spectroscopy. The measurements indicated an increase of the lifetime by a factor of 2 due to the increasingly unconfined LH1 state, which agreed very well with the design. It also showed a very long lifetime of several hundred picoseconds for the holes excited out of the well to transit back to the well through a diagonal process.
Nyckelord
- Molecular beam epitaxy (MBE); Si/SiGe; Pump-probe spectroscopy; Intersubband transition; Lifetime
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas