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On the width of the...
On the width of the recombination zone in ambipolar organic field effect transistors
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- Kemerink, M. (författare)
- Eindhoven University of Technology, Netherlands
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- Charrier, D. S. H. (författare)
- Eindhoven University of Technology, Netherlands
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- Smits, E. C. P. (författare)
- Philips Research Labs, Netherlands; University of Groningen, Netherlands
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- Mathijssen, S. G. J. (författare)
- Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands
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- de Leeuw, D. M. (författare)
- Philips Research Labs, Netherlands; University of Groningen, Netherlands
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- Janssen, R. A. J. (författare)
- Eindhoven University of Technology, Netherlands
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(creator_code:org_t)
- American Institute of Physics (AIP), 2008
- 2008
- Engelska.
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 93:3
- Relaterad länk:
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https://pure.rug.nl/...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width W is found to be given by W = root 4.34d delta, with d and delta the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device. (C) 2008 American Institute of Physics.
Ämnesord
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
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