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Charge trapping at ...
Charge trapping at the dielectric of organic transistors visualized in real time and space
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- Mathijssen, Simon G. J. (författare)
- Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands
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- Kemerink, Martijn (författare)
- Eindhoven University of Technology, Netherlands
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- Sharma, Abhinav (författare)
- Eindhoven University of Technology, Netherlands
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- Coelle, Michael (författare)
- Merck Chemistry, England
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- Bobbert, Peter A. (författare)
- Eindhoven University of Technology, Netherlands
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- Janssen, Rene A. J. (författare)
- Eindhoven University of Technology, Netherlands
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- de Leeuw, Dago M. (författare)
- Philips Research Labs, Netherlands
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(creator_code:org_t)
- Wiley-VCH Verlag, 2008
- 2008
- Engelska.
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:5, s. 975-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
Ämnesord
- NATURVETENSKAP -- Kemi -- Fysikalisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Physical Chemistry (hsv//eng)
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