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Sublimation growth ...
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers
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- Schuh, P. (författare)
- FAU Erlangen Nurnberg, Germany
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- Schoeler, M. (författare)
- FAU Erlangen Nurnberg, Germany
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- Wilhelm, M. (författare)
- FAU Erlangen Nurnberg, Germany
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Litrico, G. (författare)
- Lab Nazl Sud, Italy
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- La Via, F. (författare)
- CNR, Italy
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- Mauceri, M. (författare)
- Lpe SPA, Italy
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- Wellmann, P. J. (författare)
- FAU Erlangen Nurnberg, Germany
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(creator_code:org_t)
- ELSEVIER SCIENCE BV, 2017
- 2017
- Engelska.
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Ingår i: Journal of Crystal Growth. - : ELSEVIER SCIENCE BV. - 0022-0248 .- 1873-5002. ; 478, s. 159-162
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have developed a transfer process of 3C-SiC-on-Si (100) seeding layers grown by chemical vapor deposition onto a poly-or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [100] direction resulting in large area crystals (up to approximate to 11 cm(2)) with a thickness of up to approximately 850 lm. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals. (C) 2017 Elsevier B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- 3C-SiC; Quasi-bulk; Sublimation epitaxy; DPB free; Single crystalline; Stacking faults
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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