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Optical and microst...
Optical and microstructural investigation of heavy B-doping effects in sublimation-grown 3C-SiC
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- Galeckas, A. (författare)
- University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, Oslo, Norway
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- Carvalho, P.A. (författare)
- SINTEF Materials and Chemistry, Forskningsveien 1, Oslo, Norway
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- Ma, Q.B. (författare)
- University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, Oslo, Norway
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- Azarov, A. (författare)
- University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, Oslo, Norway
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- Hovden, S. (författare)
- SINTEF Materials and Chemistry, Forskningsveien 1, Oslo, Norway
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- Thøgersen, A. (författare)
- SINTEF Materials and Chemistry, Forskningsveien 1, Oslo, Norway
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- Wright, D.N. (författare)
- SINTEF ICT, Forskningsveien 1, Oslo, Norway
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- Diplas, S. (författare)
- SINTEF Materials and Chemistry, Forskningsveien 1, Oslo, Norway
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- Løvvik, O.M. (författare)
- SINTEF Materials and Chemistry, Forskningsveien 1, Oslo, Norway
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- Jokubavicius, Valdas (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Sun, Jianwu (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Svensson, B.G. (författare)
- University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, Oslo, Norway
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(creator_code:org_t)
- Trans Tech Publications Ltd, 2018
- 2018
- Engelska.
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Ingår i: Materials Science Forum. - : Trans Tech Publications Ltd. - 9783035711455 ; , s. 221-224
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000oC have been crosscorrelated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects. © 2018 Trans Tech Publications, Switzerland.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- 3C-SiC; Boron doping; Defects; Implantation; Photoluminescence; STEM
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Galeckas, A.
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Carvalho, P.A.
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Ma, Q.B.
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Azarov, A.
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Hovden, S.
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Thøgersen, A.
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visa fler...
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Wright, D.N.
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Diplas, S.
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Løvvik, O.M.
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Jokubavicius, Va ...
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Sun, Jianwu
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Syväjärvi, Mikae ...
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Svensson, B.G.
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visa färre...
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