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Boron-doping of cub...
Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
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- Patricia, Carvalho (författare)
- SINTEF Materials Physics, Oslo, Norway; University of Lisbon, Instituto Superior Tecnico, Lisbon, Portugal
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- Annett, Thørgesen (författare)
- SINTEF Materials Physics, Oslo, Norway
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- Quanbao, Ma (författare)
- University of Oslo, Department of Physics, Oslo, Norway
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- Daniel Nielsen, Wright (författare)
- SINTEF Instrumentation, Oslo, Norway
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- Spyros, Diplas (författare)
- SINTEF Materials Physics, Oslo, Norway; University of Oslo, Department of Chemistry, Oslo, Norway
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- Augustinas, Galeckas (författare)
- University of Oslo, Department of Physics, Oslo, Norway
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- Alexander, Azarov (författare)
- University of Oslo, Department of Physics, Oslo, Norway
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- Jokubavicius, Valdas, 1983- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Sun, Jianwu W., 1980- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Syväjärvi, Mikael, 1968- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Bengt Gunnar, Svensson (författare)
- University of Oslo, Department of Physics, Oslo, Norway
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- Ole Martin, Løvvik (författare)
- SINTEF Materials Physics, Oslo, Norway; University of Oslo, Department of Physics, Oslo, Norway
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(creator_code:org_t)
- 2018-09-06
- 2018
- Engelska.
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Ingår i: SciPost Physics. - Amsterdam, Netherlands : SciPost Foundation. - 2542-4653. ; 5:3, s. 1-17
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://scipost.org/...
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https://urn.kb.se/re...
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https://doi.org/10.2...
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Abstract
Ämnesord
Stäng
- Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Patricia, Carval ...
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Annett, Thørgese ...
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Quanbao, Ma
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Daniel Nielsen, ...
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Spyros, Diplas
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Augustinas, Gale ...
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Alexander, Azaro ...
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Jokubavicius, Va ...
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Sun, Jianwu W., ...
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Syväjärvi, Mikae ...
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Bengt Gunnar, Sv ...
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Ole Martin, Løvv ...
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