Sökning: onr:"swepub:oai:DiVA.org:liu-151510" >
Demonstration of a ...
Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface
-
- Bernardin, Evans K. (författare)
- Univ S Florida, FL 33620 USA
-
- Frewin, Christopher L. (författare)
- Univ Texas Dallas, TX 75080 USA
-
- Everly, Richard (författare)
- Nanotechnol Res and Educ Ctr USF, FL 33617 USA
-
visa fler...
-
- Ul-Hassan, Jawad (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Saddow, Stephen E. (författare)
- Univ S Florida, FL 33620 USA
-
visa färre...
-
(creator_code:org_t)
- 2018-08-18
- 2018
- Engelska.
-
Ingår i: Micromachines. - : MDPI. - 2072-666X. ; 9:8
- Relaterad länk:
-
http://urn.kb.se/res...
-
visa fler...
-
https://liu.diva-por... (primary) (Raw object)
-
https://www.mdpi.com...
-
https://urn.kb.se/re...
-
https://doi.org/10.3...
-
visa färre...
Abstract
Ämnesord
Stäng
- Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K m(2). Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of 2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was 7.5 nArms over a voltage range of -50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 +/- 130 k (GSA = 496 mu m(2)) to 46.5 +/- 4.80 k (GSA = 500 K mu m(2)). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- neural interface; silicon carbide; robust microelectrode
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas