Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors

• Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot ground state to the quantum well excited state transition. By a comparison between intersubband PC measurements and the energy level scheme of the structure, as deduced from Fourier transform photoluminescence (FTPL) and FTPL excitation spectroscopies, the main transition contributing to the PC was identified.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

indium compounds

gallium arsenide

III-V semiconductors

semiconductor quantum wells

semiconductor quantum dots

photodetectors

infrared detectors

photoluminescence

ground states

excited states

Fourier transform spectra

photoconductivity

Material physics with surface physics

Materialfysik med ytfysik

Physics

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)