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A comparative study...
A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates
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- Shi, Yuchen (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Jokubavicius, Valdas, 1983- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Höjer, Pontus, 1993- (författare)
- Linköpings universitet,Biomolekylär och Organisk Elektronik,Tekniska fakulteten
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visa fler...
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- Ivanov, Ivan Gueorguiev, 1955- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Yazdi, Gholamreza, 1966- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Yakimova, Rositsa, 1942- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Syväjärvi, Mikael, 1968- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Sun, Jianwu W., 1980- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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(creator_code:org_t)
- 2019-07-01
- 2019
- Engelska.
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Ingår i: Journal of Physics D. - : Biopress Ltd. - 0022-3727 .- 1361-6463. ; 52:34
- Relaterad länk:
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https://doi.org/10.1...
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https://liu.diva-por... (primary) (Raw object)
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that the high-quality bulk-like C-face 3C-SiC with thickness of ~1 mm can be grown over a large single domain without double positioning boundaries (DPBs), which are known to have a strongly negative impact on the electronic properties of the material. Moreover, the C-face sample exhibits a smoother surface with one unit cell height steps while the surface of the Si-face sample exhibits steps twice as high as on the C-face due to step-bunching. High-resolution XRD and low temperature photoluminescence measurements show that C-face 3C-SiC can reach the same high crystalline quality as the Si-face 3C-SiC. Furthermore, cross-section studies of the C- and Si-face 3C-SiC demonstrate that in both cases an initial homoepitaxial 4H-SiC layer followed by a polytype transition layer are formed prior to the formation and lateral expansion of 3C-SiC layer. However, the transition layer in the C-face sample is extending along the step-flow direction less than that on the Si-face sample, giving rise to a more fairly consistent crystalline quality 3C-SiC epilayer over the whole sample compared to the Si-face 3C-SiC where more defects appeared on the surface at the edge. This facilitates the lateral enlargement of 3C-SiC growth on hexagonal SiC substrates.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Shi, Yuchen
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Jokubavicius, Va ...
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Höjer, Pontus, 1 ...
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Ivanov, Ivan Gue ...
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Yazdi, Gholamrez ...
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Yakimova, Rosits ...
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visa fler...
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Syväjärvi, Mikae ...
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Sun, Jianwu W., ...
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- NATURVETENSKAP
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Linköpings universitet