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Progress of Ultra-W...
Progress of Ultra-Wide Bandgap Ga < sub > 2 O < sub > 3 Semiconductor Materials in Power MOSFETs
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- Zhang, Hongpeng (författare)
- Xidian Univ, Peoples R China
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- Yuan, Lei (författare)
- Xidian Univ, Peoples R China
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- Tang, Xiaoyan (författare)
- Xidian Univ, Peoples R China
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- Hu, Jichao (författare)
- Xian Univ Technol, Peoples R China
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- Sun, Jianwu (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Zhang, Yimen (författare)
- Xidian Univ, Peoples R China
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- Zhang, Yuming (författare)
- Xidian Univ, Peoples R China
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- Jia, Renxu (författare)
- Xidian Univ, Peoples R China
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(creator_code:org_t)
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2020
- 2020
- Engelska.
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Ingår i: IEEE transactions on power electronics. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0885-8993 .- 1941-0107. ; 35:5, s. 5157-5179
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- As a promising ultra-wide bandgap semiconductor, the <italic>& x03B2;</italic>-phase of Ga<sub>2</sub>O<sub>3</sub> has attracted more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 & x00A0;eV), high theoretical breakdown electric field (8 MV & x002F;cm), and large Baliga & x0027;s figure of merit, which is deemed as a potential candidate for next generation high-power electronics, including diodes, field effect transistors (FETs), etc. In this article, we introduce the basic material properties of Ga<sub>2</sub>O<sub>3</sub>, and review the recent progress and advances of <italic>& x03B2;</italic>-Ga<sub>2</sub>O<sub>3</sub> based metal & x2013;oxide & x2013;semiconductor field-effect transistors (<sc>mosfet</sc>s). Due to the problematic p-type doping technology up to now, the enhancement-mode (E-mode) <italic>& x03B2;</italic>-Ga<sub>2</sub>O<sub>3</sub> FETs face more difficulties, compared with depletion mode (D-mode). This article focuses on reviewing the recent progress of E-mode Ga<sub>2</sub>O<sub>3</sub> <sc>mosfet</sc>s, summarizing and comparing various feasible solutions when p-type doping is absent. Furthermore, the device fabrication and performances of state-of-art <italic>& x03B2;</italic>-Ga<sub>2</sub>O<sub>3</sub> <sc>mosfet</sc>s, including D-mode, E-mode, and planar & x002F;vertical structure are fully discussed and compared, as well as potential solutions to the challenges of Ga<sub>2</sub>O<sub>3</sub> FETs.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Crystals; Silicon carbide; Gallium nitride; Thermal conductivity; Photonic band gap; Epitaxial growth; Conductivity; Gallium oxide (Ga2O3); power metal-oxide-semiconductor field-effect transistor (mosfet); power semiconductor devices; ultra wide band-gap (UWBG) semiconductor
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- art (ämneskategori)
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