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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02920naa a2200325 4500 | |
| 001 | oai:DiVA.org:liu-166847 | |
| 003 | SwePub | |
| 008 | 200622s2020 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1668472 URI |
| 024 | 7 | a https://doi.org/10.1016/j.vacuum.2020.1092312 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a for2 swepub-publicationtype |
| 100 | 1 | a Beshkova, Milenau Bulgarian Acad Sci, Bulgaria4 aut |
| 245 | 1 0 | a Properties and potential applications of two-dimensional AlN |
| 264 | 1 | b PERGAMON-ELSEVIER SCIENCE LTD,c 2020 |
| 338 | a electronic2 rdacarrier | |
| 500 | a Funding Agencies|Bulgarian National Science FundNational Science Fund of Bulgaria [DN 18/6]; SSF (Sweden)Swedish Foundation for Strategic Research [GMT 14-077, RMA 15-0024, VR 2018-04962] | |
| 520 | a The success of Graphene has triggered the research interest in other stable, single and few-atom-thick layers of van der Waals materials, which can possess attractive and technologically useful properties. Other complex structures, such as boron nitride, MXenes and metal chalcogenides have been successfully synthesized as layered materials showing advanced properties. Here, after an introduction briefing novel 2D materials, we focus on 2D AlN and present a review covering theoretical considerations on the stability of an infinite hexagonal AlN (h-AlN) sheet, differences that occur in the electronic structure between bulk AlN and single layer and discuss possible methods of tuning their electronic and magnetic properties by manipulating the surface and strain using DFT (density functional theory) computations. We address potential applications of 2D-AlN with an emphasis on gas sensing for CO2, CO, H-2, O-2, NO and NO2 in the presence of NH3. Further, we discuss some growth strategies of AlN single layer and few layers on different substrates. 2D AlN layers and nanotubes with ultrawide bandgap (9.20-9.60 eV) which shows a great potential to support innovative and front-end development of deep-ultraviolet optoelectronic devices are illustrated. | |
| 650 | 7 | a NATURVETENSKAPx Kemix Oorganisk kemi0 (SwePub)104042 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Chemical Sciencesx Inorganic Chemistry0 (SwePub)104042 hsv//eng |
| 653 | a 2D-AlN; DFT; Synthesis; Sensing | |
| 700 | 1 | a Yakimova, Rositsau Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)rosia15 |
| 710 | 2 | a Bulgarian Acad Sci, Bulgariab Halvledarmaterial4 org |
| 773 | 0 | t Vacuumd : PERGAMON-ELSEVIER SCIENCE LTDg 176q 176x 0042-207Xx 1879-2715 |
| 856 | 4 | u https://liu.diva-portal.org/smash/get/diva2:1444666/FULLTEXT01.pdfx primaryx Raw objecty fulltext:postprint |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-166847 |
| 856 | 4 8 | u https://doi.org/10.1016/j.vacuum.2020.109231 |
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