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Direct epitaxial na...
Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
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- Chih-Wei, Chih-Wei (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Deminskyi, Petro (författare)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Martinovic, Ivan (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ivanov, Ivan Gueorguiev (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Palisaitis, Justinas (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Pedersen, Henrik (författare)
- Linköpings universitet,Kemi,Tekniska fakulteten
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(creator_code:org_t)
- AMER INST PHYSICS, 2020
- 2020
- Engelska.
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 117:9
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://aip.scitatio...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Indium nitride (InN) is a highly promising material for high frequency electronics given its low bandgap and high electron mobility. The development of InN-based devices is hampered by the limitations in depositing very thin InN films of high quality. We demonstrate growth of high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD). High resolution x-ray diffraction and transmission electron microscopy show epitaxial growth and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface roughness (0.14nm) is found to reproduce sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high-quality nanometer-thin InN films for subsequent formation of heterojunctions.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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