Theoretical polarization of zero phonon lines in point defects

• In quantum technologies, point defects in semiconductors are becoming more significant. Understanding the frequency, intensity, and polarization of the zero phonon line is important. The last two properties are the subject of this paper. I present a method for calculating these properties and show the importance of using wave functions from both the ground and excited state. The validity of this method is demonstrated on the divacancy in 4H-SiC. Here, the calculated polarization and radiative lifetimes are in excellent agreement with experimental measurements. In general, this method can help to identify point defects and estimate suitable applications.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

density functional theory

photoluminescence

Point defects

zero phonon line

Excited states

Phonons

Polarization

Silicon carbide

Wave functions

Wide band gap semiconductors

Defects in semiconductors

Divacancies

Quantum technologies

Radiative lifetime

Zero phonon lines

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)