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Low temperature gro...
Low temperature growth of stress-free single phase alpha-W films using HiPIMS with synchronized pulsed substrate bias
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- Shimizu, Tetsuhide (författare)
- Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten,Tokyo Metropolitan Univ, Japan
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- Takahashi, Kazuki (författare)
- Tokyo Metropolitan Univ, Japan
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- Boyd, Robert (författare)
- Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten
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- Viloan, Rommel Paulo (författare)
- Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten
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- Keraudy, Julien (författare)
- Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten
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- Lundin, Daniel (författare)
- Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten
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- Yang, Ming (författare)
- Tokyo Metropolitan Univ, Japan
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- Helmersson, Ulf (författare)
- Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten
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(creator_code:org_t)
- American Institute of Physics (AIP), 2021
- 2021
- Engelska.
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 129:15
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://aip.scitatio...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Efficient metal-ion-irradiation during film growth with the concurrent reduction of gas-ion-irradiation is realized for high power impulse magnetron sputtering by the use of a synchronized, but delayed, pulsed substrate bias. In this way, the growth of stress-free, single phase alpha -W thin films is demonstrated without additional substrate heating or post-annealing. By synchronizing the pulsed substrate bias to the metal-ion rich portion of the discharge, tungsten films with a 110 oriented crystal texture are obtained as compared to the 111 orientation obtained using a continuous substrate bias. At the same time, a reduction of Ar incorporation in the films are observed, resulting in the decrease of compressive film stress from sigma =1.80-1.43GPa when switching from continuous to synchronized bias. This trend is further enhanced by the increase of the synchronized bias voltage, whereby a much lower compressive stress sigma =0.71GPa is obtained at U-s=200V. In addition, switching the inert gas from Ar to Kr has led to fully relaxed, low tensile stress (0.03GPa) tungsten films with no measurable concentration of trapped gas atoms. Room-temperature electrical resistivity is correlated with the microstructural properties, showing lower resistivities for higher U-s and having the lowest resistivity (14.2 mu Omega cm) for the Kr sputtered tungsten films. These results illustrate the clear benefit of utilizing selective metal-ion-irradiation during film growth as an effective pathway to minimize the compressive stress induced by high-energetic gas ions/neutrals during low temperature growth of high melting temperature materials.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
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- ref (ämneskategori)
- art (ämneskategori)
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