Dilute nitrides and 1.3 mu m GaInNAs quantum well lasers on GaAs

• We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71 mu m at 300 K. High quality 1.3 mu m GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100 x 1000 mu m(2)) is 300, 300, 400 and 940 A/cm(2) for single, double, triple and quadruple QW lasers, respectively. The maximum 3 dB bandwidth reaches 17 GHz and high-speed transmission at 10 Gb/s up to 110 degrees C under a constant voltage has been demonstrated.

Nyckelord

Dilute nitride

1.3 mu m

GaInNAs

GaAs

Laser

TECHNOLOGY

TEKNIKVETENSKAP

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