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High-performance hy...
High-performance hysteresis-free perovskite transistors through anion engineering
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- Zhu, Huihui (författare)
- Pohang Univ Sci & Technol, South Korea
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- Liu, Ao (författare)
- Pohang Univ Sci & Technol, South Korea
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- Shim, Kyu In (författare)
- Pohang Univ Sci & Technol, South Korea; Pohang Univ Sci & Technol, South Korea
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- Jung, Haksoon (författare)
- Pohang Univ Sci & Technol, South Korea
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- Zou, Taoyu (författare)
- Pohang Univ Sci & Technol, South Korea
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- Reo, Youjin (författare)
- Pohang Univ Sci & Technol, South Korea
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- Kim, Hyunjun (författare)
- Pohang Univ Sci & Technol, South Korea
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- Han, Jeong Woo (författare)
- Pohang Univ Sci & Technol, South Korea; Pohang Univ Sci & Technol, South Korea
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- Chen, Yimu (författare)
- Harbin Inst Technol, Peoples R China
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- Chu, Hye Yong (författare)
- Samsung Display Inc, South Korea
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- Lim, Jun Hyung (författare)
- Samsung Display Inc, South Korea
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- Kim, Hyung-Jun (författare)
- Samsung Display Inc, South Korea
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- Bai, Sai (författare)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten,Univ Elect Sci & Technol China, Peoples R China
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- Noh, Yong-Young (författare)
- Pohang Univ Sci & Technol, South Korea
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(creator_code:org_t)
- 2022-04-01
- 2022
- Engelska.
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Ingår i: Nature Communications. - : Nature Portfolio. - 2041-1723. ; 13:1
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI(3)) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm(2) V-1 s(-1), current on/off ratios exceeding 10(7), and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits. Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm(2)V(-1)S(-1), which can be integrated with commercial metal oxide transistors on a single chip.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
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Zhu, Huihui
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Liu, Ao
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Shim, Kyu In
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Jung, Haksoon
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Zou, Taoyu
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Reo, Youjin
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visa fler...
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Kim, Hyunjun
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Han, Jeong Woo
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Chen, Yimu
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Chu, Hye Yong
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Lim, Jun Hyung
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Kim, Hyung-Jun
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Bai, Sai
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Noh, Yong-Young
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- Om ämnet
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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och Materialkemi
- Artiklar i publikationen
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Nature Communica ...
- Av lärosätet
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Linköpings universitet