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Sökning: onr:"swepub:oai:DiVA.org:liu-187316" > Anisotropic dielect...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00004085naa a2200385 4500
001oai:DiVA.org:liu-187316
003SwePub
008220818s2022 | |||||||||||000 ||eng|
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1873162 URI
0247 a https://doi.org/10.1063/5.00876022 DOI
040 a (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
1001 a Hilfiker, Matthewu Univ Nebraska Lincoln, NE 68588 USA4 aut
2451 0a Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (0≤?≤10≤x≤1)
264 1b AIP Publishing,c 2022
338 a print2 rdacarrier
500 a Funding Agencies|National Science Foundation (NSF) [NSF DMR 1808715, NSF/EPSCoR]; RII Track-1: Emergent Quantum Materials and Technologies (EQUATE) [OIA-2044049]; Air Force Office of Scientific Research [FA9550-18-1-0360, FA9550-19-S-0003, FA9550-21-1-0259]; ACCESS, an AFOSR Center of Excellence [FA9550-18-1-0529]; Knut and Alice Wallenbergs Foundation; University of Nebraska Foundation; J. A. Woollam Foundation; Japan Society for the Promotion of Science Overseas Challenge Program for Young Researchers [1080033]
520 a Mueller matrix spectroscopic ellipsometry is applied to determine anisotropic optical properties for a set of single-crystal rhombohedral structure alpha-(AlxGa1-x)(2)O-3 thin films (0 <= x <= 1). Samples are grown by plasma-assisted molecular beam epitaxy on m-plane sapphire. A critical-point model is used to render a spectroscopic model dielectric function tensor and to determine direct electronic band-to-band transition parameters, including the direction dependent two lowest-photon energy band-to-band transitions associated with the anisotropic bandgap. We obtain the composition dependence of the direction dependent two lowest band-to-band transitions with separate bandgap bowing parameters associated with the perpendicular (b(Eg,⊥) = 1.31 eV) and parallel (b(Eg,||) = 1.61 eV) electric field polarization to the lattice c direction. Our density functional theory calculations indicate a transition from indirect to direct characteristics between alpha-Ga2O3 and alpha-Al2O3, respectively, and we identify a switch in band order where the lowest band-to-band transition occurs with polarization perpendicular to c in alpha-Ga2O3 whereas for alpha-Al2O3 the lowest transition occurs with polarization parallel to c. We estimate that the change in band order occurs at approximately 40% Al content. Additionally, the characteristic of the lowest energy critical point transition for polarization parallel to c changes from M-1 type in alpha-Ga2O3 to M-0 type van Hove singularity in alpha-Al2O3.
650 7a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
7001 a Kilic, Ufuku Univ Nebraska Lincoln, NE 68588 USA4 aut
7001 a Stokey, Meganu Univ Nebraska Lincoln, NE 68588 USA4 aut
7001 a Jinno, Rienau Cornell Univ, NY 14853 USA; Kyoto Univ, Japan4 aut
7001 a Cho, Yongjinu Cornell Univ, NY 14853 USA4 aut
7001 a Xing, Huili Graceu Cornell Univ, NY 14853 USA; Cornell Univ, NY 14853 USA4 aut
7001 a Jena, Debdeepu Cornell Univ, NY 14853 USA; Cornell Univ, NY 14853 USA4 aut
7001 a Korlacki, Rafalu Univ Nebraska Lincoln, NE 68588 USA4 aut
7001 a Schubert, Mathiasu Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska Lincoln, NE 68588 USA,Centre for III-nitride technology (C3NiT)4 aut0 (Swepub:liu)schma39
7102 a Univ Nebraska Lincoln, NE 68588 USAb Cornell Univ, NY 14853 USA; Kyoto Univ, Japan4 org
7730 t Applied Physics Lettersd : AIP Publishingg 121:5q 121:5x 0003-6951x 1077-3118
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-187316
8564 8u https://doi.org/10.1063/5.0087602

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