Sökning: onr:"swepub:oai:DiVA.org:liu-188417" > Exhaustive characte...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 04065naa a2200397 4500 | |
001 | oai:DiVA.org:liu-188417 | |
003 | SwePub | |
008 | 220914s2022 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1884172 URI |
024 | 7 | a https://doi.org/10.1515/nanoph-2022-04002 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Davidsson, Joel,d 1989-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)joeda01 |
245 | 1 0 | a Exhaustive characterization of modified Si vacancies in 4H-SiC |
264 | c 2022-09-05 | |
264 | 1 | b Walter de Gruyter,c 2022 |
338 | a electronic2 rdacarrier | |
500 | a Funding Agencies|Knut and Alice Wallenberg Foundation through WBSQD2 project [2018.0071]; Swedish Government Strategic Research Area Swedish e-science Research Centre (SeRC); Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Covid-19 SeRC transition grant; Swedish Research Council (VR) [2020-05402]; Swedish National Infrastructure for Computing (SNIC); Swedish Research Council [2018-05973] | |
520 | a The negatively charged silicon vacancy (V-Si(-)) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-optical signals in a defect database generated by automatic defect analysis and qualification (ADAQ) workflows. This search reveals only one class of atomic structures that exhibit silicon-vacancy-like properties in the data: a carbon anti-site (C-Si) within sub-nanometer distances from the silicon vacancy only slightly alters the latter without affecting the charge or spin state. Such a perturbation is energetically bound. We consider the formation of V-Si(-) + C-Si; up to 2 nm distance and report their zero phonon lines and zero field splitting values. In addition, we perform high-resolution photoluminescence experiments in the silicon vacancy region and find an abundance of lines. Comparing our computational and experimental results, several configurations show great agreement. Our work demonstrates the effectiveness of a database with high-throughput results in the search for defects in quantum applications. | |
650 | 7 | a NATURVETENSKAPx Fysikx Annan fysik0 (SwePub)103992 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Other Physics Topics0 (SwePub)103992 hsv//eng |
653 | a high-throughput; photoluminescence; point defects; SiC; silicon vacancy | |
700 | 1 | a Babar, Rohitu Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)rohba86 |
700 | 1 | a Shafizadeh, Danialu Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)dansh92 |
700 | 1 | a Ivanov, Ivan Gueorguiev,d 1955-u Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)ivaiv28 |
700 | 1 | a Ivády, Viktor,d 1986-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Max Planck Inst Phys komplexer Syst, Germany4 aut0 (Swepub:liu)vikiv58 |
700 | 1 | a Armiento, Rickard,d 1976-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)ricar47 |
700 | 1 | a Abrikosov, Igor A.,c Professor,d 1965-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)igoab43 |
710 | 2 | a Linköpings universitetb Teoretisk Fysik4 org |
773 | 0 | t Nanophotonicsd : Walter de Gruyterg 11:20, s. 4565-4580q 11:20<4565-4580x 2192-8606x 2192-8614 |
856 | 4 | u https://liu.diva-portal.org/smash/get/diva2:1695494/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-188417 |
856 | 4 8 | u https://doi.org/10.1515/nanoph-2022-0400 |
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