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Effects of substrat...
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Hsu, Tun-Wei,1991-Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten
(författare)
Effects of substrate rotation during AlSi-HiPIMS/Ti-DCMS co-sputtering growth of TiAlSiN coatings on phase content, microstructure, and mechanical properties
- Artikel/kapitelEngelska2023
Förlag, utgivningsår, omfång ...
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Elsevier,2023
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LIBRIS-ID:oai:DiVA.org:liu-191778
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-191778URI
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https://doi.org/10.1016/j.surfcoat.2022.128986DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
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Funding: VINNOVA (FunMat-II project) [2016-05156]; Swedish Research Council [2017-03813, 2017-06701]; Swedish government strategic research area grant AFM - SFO MatLiU [2009-00971]
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A combined high-power impulse and dc magnetron co-sputtering (HiPIMS/DCMS) technique is used to deposit Ti0.6Al0.32Si0.08N films with 1-fold substrate table rotation. Layers are grown at two different substrate-target separations, two different rotational speeds, and with different values of substrate bias. The aim is to study the role of (1) overlap between ion and neutral fluxes generated from HiPIMS and DCMS sources, respectively, and (2) the subplantation range of low-mass ions. Results from X-ray diffractometry highlight the necessity of flux intermixing in the formation of the metastable B1-structured TiAlSiN solid solutions. All films grown at short target-to-substrate distance contain the hexagonal AlN phase, as there is essentially no overlap between HiPIMS and DCMS fluxes, thus the Al+ and Si+ subplantation is very limited. Under conditions of high flux intermixing corresponding to larger target-to-substrate distance, no w-AlN forms irrespective of rotational speed (1 or 3 rpm) and bias amplitude (120 or 480 V), indicating that the role of Al+/Si+ and Ti flux overlap is crucial for the phase formation during film growth by HiPIMS/DCMS with substrate rotation. This conclusion is further supported by the fact that the reduction of the bilayer thickness with increasing the target-to-substrate distance (hence increasing flux overlap) is larger for films grown with higher amplitude of the substrate bias, indicative of more efficient Al+/Si+ subplantation into the c-TiN phase. Single-phase films with the hardness close to that of layers grown with stationary substrate table can be achieved, however, at the expense of higher compressive stress.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Greczynski, Grzegorz,1973-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)grzgr49
(författare)
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Christensen, Bjarke HollDanish Technological Institute, Kongsvang Allé 29, DK-8000 Aarhus C, Denmark
(författare)
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Almtoft, Klaus PaghDanish Technological Institute, Kongsvang Allé 29, DK-8000 Aarhus C, Denmark
(författare)
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Boyd, Robert,1972-Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten(Swepub:liu)robbo87
(författare)
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Kolozsvári, SzilárdPlansee Composite Materials GmbH, Lechbruck am See DE-86983, Germany
(författare)
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Polcik, PeterPlansee Composite Materials GmbH, Lechbruck am See DE-86983, Germany
(författare)
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Bolz, StephanCemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
(författare)
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Kölker, WernerCemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
(författare)
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Schiffers, ChristophCemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
(författare)
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Mesic, BiljanaCemeCon AG, Adenauerstr. 20 A4, D-52146 Wűrselen, Germany
(författare)
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Odén, Magnus,1965-Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten(Swepub:liu)magod41
(författare)
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Linköpings universitetNanostrukturerade material
(creator_code:org_t)
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Ingår i:Surface & Coatings Technology: Elsevier4530257-89721879-3347
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