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Solution-Processed ...
Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors
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- Perinot, Andrea (författare)
- Ist Italiano Tecnol, Italy
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- Scuratti, Francesca (författare)
- Ist Italiano Tecnol, Italy
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- Scaccabarozzi, Alberto D. (författare)
- Ist Italiano Tecnol, Italy
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- Tran, Karolina (författare)
- Univ Groningen, Netherlands
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- Salazar-Rios, Jorge Mario (författare)
- Univ Groningen, Netherlands
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- Loi, Maria Antonietta (författare)
- Univ Groningen, Netherlands
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- Salvatore, Giovanni (författare)
- Univ Ca Foscari Venezia, Italy
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- Fabiano, Simone (författare)
- Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten
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- Caironi, Mario (författare)
- Ist Italiano Tecnol, Italy
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(creator_code:org_t)
- AMER CHEMICAL SOC, 2023
- 2023
- Engelska.
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Ingår i: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 15:48, s. 56095-56105
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm(2) and leakage currents below 1 nA/cm(2). Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Nyckelord
- organic electronics; organic transistors; field-effecttransistors; low voltage; cross-linking; multilayer dielectric; doping
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