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Electron effective ...
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Armakavicius, Nerijus,1989-Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC)
(författare)
Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
- Artikel/kapitelEngelska2024
Förlag, utgivningsår, omfång ...
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AIP Publishing,2024
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Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:liu-201324
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-201324URI
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https://doi.org/10.1063/5.0176188DOI
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https://lup.lub.lu.se/record/e1cbcf5f-8228-45d4-936c-49ebc2fcf9b9URI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA) under the Competence Center Program [2022-03139]; Lund University; Linkoping University; Chalmers University of Technology; Ericsson; Epiluvac; FMV; Gotmic; Hexagem; Hitachi Energy; UMS; On Semiconductor; Swedish Research Council VR; Region Skane SAAB; Swedish Foundation for Strategic Research; SweGaN; Swedish Government Strategic Research Area NanoLund; Volvo Cars; Materials Science on Functional Materials at Linkoeping University, Faculty Grant SFO Mat LiU; National Science Foundation; EPSCoR RII Track-1: Emergent Quantum Materials and Technologies (EQUATE) [2016-00889, 2022-04812]; Air Force Office of Scientific Research [RIF14-055, EM16-0024]; University of Nebraska Foundation; J. A. Woollam Foundation [2009-00971]; [ECCS 2329940]; [OIA-2044049]; [FA9550-19-S-0003]; [FA9550-21-1-0259]; [FA9550-23-1-0574 DEF]
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Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Knight, Sean RobertLinköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC)(Swepub:liu)seakn63
(författare)
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Kuhne, Philipp,1981-Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC)(Swepub:liu)phiku63
(författare)
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Stanishev, Vallery,1970-Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Terahertz Materials Analysis Center (THeMAC)(Swepub:liu)valst30
(författare)
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Tran, DatLinköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC)(Swepub:liu)dattr18
(författare)
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Richter, SteffenLinköping University,Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC),NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas(Swepub:lu)st6188ri
(författare)
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Papamichail, Alexis,1990-Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT–Janzén(Swepub:liu)alepa21
(författare)
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Stokey, MeganUniv Nebraska Lincoln, NE 68588 USA,University of Nebraska - Lincoln
(författare)
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Sorensen, PrestonUniv Nebraska Lincoln, NE 68588 USA,University of Nebraska - Lincoln
(författare)
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Kilic, UfukUniv Nebraska Lincoln, NE 68588 USA,University of Nebraska - Lincoln
(författare)
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Schubert, MathiasLinköping University,Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden; Univ Nebraska Lincoln, NE 68588 USA,Center for III-Nitride Technology, C3NiT–Janzén,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,University of Nebraska - Lincoln(Swepub:lu)ma5206sc
(författare)
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Paskov, Plamen P.,1959-Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Center for III-Nitride Technology, C3NiT–Janzén(Swepub:liu)plapa31
(författare)
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Darakchieva, Vanya,Professor,1971-Linköping University,Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC),NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas(Swepub:lu)va4841da
(författare)
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
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Ingår i:APL Materials: AIP Publishing12:22166-532X
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Armakavicius, Ne ...
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