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Dual configuration ...
Dual configuration of shallow acceptor levels in 4H-SiC
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- Bathen, Marianne Etzelmueller (författare)
- Swiss Fed Inst Technol, Switzerland; Univ Oslo, Norway
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- Kumar, Piyush (författare)
- Swiss Fed Inst Technol, Switzerland
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- Ghezellou, Misagh (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Belanche, Manuel (författare)
- Swiss Fed Inst Technol, Switzerland
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- Vines, Lasse (författare)
- Univ Oslo, Norway
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- Ul-Hassan, Jawad (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Grossner, Ulrike (författare)
- Swiss Fed Inst Technol, Switzerland
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(creator_code:org_t)
- ELSEVIER SCI LTD, 2024
- 2024
- Engelska.
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Ingår i: Materials Science in Semiconductor Processing. - : ELSEVIER SCI LTD. - 1369-8001 .- 1873-4081. ; 177
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT. Therefore, a comprehensive understanding of the defect energetics and how the impurities are introduced into the material is imperative. Herein, we study impurity related defect levels in 4H-SiC epitaxial layers (epi-layers) grown by chemical vapor deposition (CVD) under various conditions using minority carrier transient spectroscopy (MCTS). We find two trap levels assigned to boron impurities, B and D, which are introduced to varying degrees depending on the growth conditions. A second acceptor level that was labeled X in the literature and attributed to impurity related defects is also observed. Importantly, both the B and X levels exhibit fine structure revealed by MCTS measurements. We attribute the fine structure to acceptor impurities at hexagonal and pseudo -cubic lattice sites in 4H-SiC, and tentatively assign the X peak to Al based on experimental findings and density functional theory calculations.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Silicon carbide; Acceptor dopants; Electrically active defects; Minority carrier transient spectroscopy; Density functional theory
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