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Thermoelectric tran...
Thermoelectric transport properties of highly oriented FeSb2 thin films
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- Sun, Y (författare)
- University of Aarhus
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- Johnsen, S (författare)
- University of Aarhus
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- Eklund, Per (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Sillassen, M (författare)
- University of Aarhus
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- Bottiger, J (författare)
- University of Aarhus
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- Oeschler, N (författare)
- Max Planck Institute
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- Sun, P (författare)
- Max Planck Institute
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- Steglich, F (författare)
- Max Planck Institute
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- Iversen, B B (författare)
- University of Aarhus
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(creator_code:org_t)
- AIP Publishing, 2009
- 2009
- Engelska.
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Ingår i: JOURNAL OF APPLIED PHYSICS. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:3
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S similar to 160 mu V K-1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.
Nyckelord
- carrier density
- electrical resistivity
- Hall mobility
- iron compounds
- Seebeck effect
- semiconductor thin films
- sputter deposition
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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