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Modeling of band ga...
Modeling of band gap properties of GaInNP alloys lattice matched to GaAs
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Izadifard, M. (författare)
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Hong, Y.G. (författare)
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Tu, C.W. (författare)
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(creator_code:org_t)
- AIP Publishing, 2006
- 2006
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:3, s. 31907-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN =2.1±0.1 eV and CMN =1.7±0.2 eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys. © 2006 American Institute of Physics.
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- NATURAL SCIENCES
- NATURVETENSKAP
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