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On a possible origi...
On a possible origin of the 2.87 eV optical transition in GaNP
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Izadifard, M. (författare)
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Xin, H.P. (författare)
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Tu, C.W. (författare)
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(creator_code:org_t)
- 2005-12-14
- 2006
- Engelska.
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 18:2, s. 449-457
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Temperature dependent photoluminescence excitation spectroscopy is employed to evaluate basic physical properties of the 2.87 eV absorption peak, recently discovered for the GaNxP1-x alloys. Whereas the appearance of this transition is found to be facilitated by incorporation of N and also H atoms, its intensity does not scale with the N content in the alloys. This questions the possible association of this feature with an N-related localized state. On the basis of the results of temperature dependent measurements, it is concluded that the state involved has a non-Γ character. Excitation of the known N-related localized states via this state is found to be non-selective, unlike that between the N-related centres. The observed properties are shown to be barely consistent with those predicted for the higher lying localized state of the isolated N atom derived from the Γ conduction band minimum (CBM). Alternative explanations for the '2.87 eV' state as being due to either a t 2 component of the X3c (or L1c) CBM or a level arising from a complex of N and H (in some form) are also discussed. © 2006 IOP Publishing Ltd.
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