Sökning: onr:"swepub:oai:DiVA.org:liu-36639" > Optical signatures ...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 02501naa a2200421 4500 | |
001 | oai:DiVA.org:liu-36639 | |
003 | SwePub | |
008 | 091010s2006 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-366392 URI |
024 | 7 | a https://doi.org/10.1016/j.mssp.2006.01.0752 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Monemar, Bo,d 1942-u Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)bomo46 |
245 | 1 0 | a Optical signatures of dopants in GaN |
264 | 1 | b Elsevier BV,c 2006 |
338 | a print2 rdacarrier | |
520 | a The characteristic optical spectra for shallow donors and acceptors in GaN are discussed. The most accurate photoluminescence (PL) data are obtained from samples grown on freestanding GaN substrates, where strain shifts are absent and a low spectroscopic line width is obtained. Recent PL data for excitons bound to the O and Si donors are discussed in some detail, giving accurate values for the binding energies and excited bound donor states. The Mg-acceptor is the most important one for p-doping, but the related optical spectra are controversial. We show that there are two acceptors present in Mg-doped GaN, with two different acceptor bound exciton peaks, and also two corresponding lower energy donor-acceptor pair spectra. We give tentative evidence for their interpretation. © 2006 Elsevier Ltd. All rights reserved. | |
653 | a NATURAL SCIENCES | |
653 | a NATURVETENSKAP | |
700 | 1 | a Paskov, Plamen,d 1959-u Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)plapa31 |
700 | 1 | a Bergman, Peder,d 1961-u Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)pedbe86 |
700 | 1 | a Toropov, A.A.4 aut |
700 | 1 | a Shubina, T.V.4 aut |
700 | 1 | a Figge, S.4 aut |
700 | 1 | a Paskova, T.4 aut |
700 | 1 | a Hommel, D.4 aut |
700 | 1 | a Usui, A.4 aut |
700 | 1 | a Iwaya, M.4 aut |
700 | 1 | a Kamiyama, S.4 aut |
700 | 1 | a Amano, H.4 aut |
700 | 1 | a Akasaki, I.4 aut |
710 | 2 | a Linköpings universitetb Tekniska högskolan4 org |
773 | 0 | t Materials Science in Semiconductor Processingd : Elsevier BVg 9:1-3, s. 168-174q 9:1-3<168-174x 1369-8001x 1873-4081 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-36639 |
856 | 4 8 | u https://doi.org/10.1016/j.mssp.2006.01.075 |
Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.
Kopiera och spara länken för att återkomma till aktuell vy