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Role of nitrogen in...
Role of nitrogen in photoluminescence up-conversion in GaInNP/GaAs heterostructures
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Bergman, Peder, 1961- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Izadifard, Morteza, 1965- (författare)
- Physics Department, Shahrood University of Technology, Shahrood, Iran
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- Hong, Y.G. (författare)
- Department of Electrical and Computer Engineering, University of California, La Jolla, CA, USA
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- Tu, C.W. (författare)
- Department of Electrical and Computer Engineering, University of California, La Jolla, CA, USA
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(creator_code:org_t)
- American Institute of Physics (AIP), 2007
- 2007
- Engelska.
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Ingår i: AIP Conference Proceedings / Volume 893. - : American Institute of Physics (AIP). ; , s. 381-382
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Alloying of disordered GaInP with nitrogen is shown to lead to very efficient PLU in GaInNP/GaAs heterostructures grown by gas source molecular beam epitaxy (GS‐MBE). This is attributed to the N‐induced changes in the band alignment at the GaInNP/GaAs heterointerface from the type I for the N‐free structure to the type II in the samples with N compositions exceeding 0.5%. Based on the performed excitation power dependent measurements, a possible mechanism for the energy upconversion is suggested as being due to the two‐step two‐photon absorption. The photon recycling effect is shown to be important for the structures with N=1%, from time‐resolved PL measurements. © 2007 American Institute of Physics
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