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The determination o...
The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique
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Neimontas, K. (författare)
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Malinauskas, T. (författare)
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Aleksiejunas, R. (författare)
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Sudzius, M. (författare)
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Jarasiunas, K. (författare)
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- Bergman, Peder, 1961- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik, 1954- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2006-06-09
- 2006
- Engelska.
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 21:7, s. 952-958
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We applied a picosecond four-wave mixing technique for measurements of carrier lifetimes and diffusion coefficients in highly excited epitaxial layers, semi-insulating and heavily doped 4H-SiC substrates. Optical carrier injection at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the excited region from 1-2 νm to 50 νm, and thus determine photoelectric parameters of carrier plasma in the density range from 2 × 1016 to 1019 cm-3. Strong dependence of carrier lifetime and mobility on carrier density was found in the epitaxial layers. The origin of fast decay components, not resolved previously by photoluminescence and free-carrier absorption techniques in SiC, was attributed to nonlinear carrier recombination. Numerical modelling provided a value of bimolecular recombination coefficient equal to B ≤ (2-4) × 10-11 cm3 s-1 and verified a surface recombination velocity S ≤ 4 × 104 cm s-1. In heavily doped crystals, nonlinear carrier recombination reduced the carrier lifetime down to 1.1 ns, while in semi-insulating ones a lifetime of 1.5-2.5 ns was measured. Temperature dependences of four-wave mixing provided monopolar carrier mobility in heavily doped and bipolar one in semi-insulating crystals, and revealed the contribution of ionized impurity and phonon scattering mechanisms. © 2006 IOP Publishing Ltd.
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- NATURAL SCIENCES
- NATURVETENSKAP
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