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Electron paramagnet...
Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC
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- Carlsson, Patrick, 1975- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Rabia, Kaneez, 1977- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Nguyen, Son Tien, 1953- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ohshima, T. (författare)
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Morishita, N. (författare)
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Itoh, H. (författare)
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Isoya, J. (författare)
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- Janzén, Erik, 1954- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2008-03-27
- 2008
- Engelska.
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Ingår i: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY. - BRISTOL, ENGLAND : IOP PUBLISHING LTD.
- Relaterad länk:
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10(18) cm(-2). After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C-3v symmetry with g = 2.004 and a fine-structure parameter D = 436.5 x 10(-4) cm(-1). The L5 spectrum was only detected under light illumination and it could not be detected after annealing at similar to 550 C. The principal z-axis of the D tensor is parallel to the < 111 >-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C-2v-symmetry with an isotropic g-value of g=2.003 and the fine structure parameters D=547.7 x 10(-4) cm-1 and E=56.2 x 10(-4) cm(-1). The L6 center disappeared after annealing at a rather low temperature (similar to 200 degrees C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.
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- NATURAL SCIENCES
- NATURVETENSKAP
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Carlsson, Patric ...
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Rabia, Kaneez, 1 ...
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Nguyen, Son Tien ...
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Ohshima, T.
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Morishita, N.
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Itoh, H.
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Isoya, J.
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Janzén, Erik, 19 ...
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- PROCEEDINGS OF T ...
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Journal of Physi ...
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Linköpings universitet