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EPR identification ...
EPR identification of intrinsic defects in SiC
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Isoya, J. (författare)
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Umeda, T. (författare)
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Mizuochi, N. (författare)
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- Nguyen, Son Tien, 1953- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik, 1954- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ohshima, T. (författare)
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(creator_code:org_t)
- Wiley, 2008
- 2008
- Engelska.
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 245:7, s. 1298-1314
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (h- and k-sites in 4H-SiC) but also the identification of the defect species is accomplished through the comparison of the obtained HF parameters with those obtained from first principles calculations. Our works of identifying vacancy-related defects such as the monovacancies, divacancies, and antisite-vacancy pairs in 4H-SiC are reviewed. In addition, it is demonstrated that the observation of the central line of the TV2a center of S = 3/2 has been achieved by pulsed-ELDOR. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
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- NATURAL SCIENCES
- NATURVETENSKAP
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