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Identification of G...
Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
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Thinh, N. Q. (författare)
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- Vorona, Igor, 1967- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Limpijumnong, S. (författare)
- School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, Thailand
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- Zhang, S. B. (författare)
- National Renewable Energy Laboratory, Golden, Colorado, USA
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- Hong, Y. G. (författare)
- Department of Electrical and Computer Engineering, University of California, La Jolla, California, USA
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- Tu, C. W. (författare)
- Department of Electrical and Computer Engineering, University of California, La Jolla, California, USA
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- Utsumi, A. (författare)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
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- Furukawa, Y. (författare)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
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- Moon, S. (författare)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
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- Wakahara, A. (författare)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
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- Yonezu, H. (författare)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
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(creator_code:org_t)
- APS, 2004
- 2004
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 70:12, s. 121201-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .
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Thinh, N. Q.
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Vorona, Igor, 19 ...
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Buyanova, Irina, ...
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Chen, Weimin, 19 ...
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Limpijumnong, S.
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Zhang, S. B.
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visa fler...
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Hong, Y. G.
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Tu, C. W.
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Utsumi, A.
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Furukawa, Y.
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Moon, S.
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Wakahara, A.
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Yonezu, H.
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Physical Review ...
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Linköpings universitet