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Origin of bandgap b...
Origin of bandgap bowing in GaNP alloys
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Izadifard, Morteza, 1965- (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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Xin, H. P. (författare)
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Tu, C. W. (författare)
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(creator_code:org_t)
- Institution of Engineering and Technology (IET), 2004
- 2004
- Engelska.
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Ingår i: IEE Proceedings - Optoelectronics. - : Institution of Engineering and Technology (IET). - 1350-2433 .- 1359-7078.
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- By employing photoluminescence excitation (PLE) spectroscopy, the authors provide direct evidence for N-induced strong coupling and repelling of host conduction band (CB) states in GaNxP1-x. This strong coupling is manifested as (i) a drastic change in the ratio of oscillator strengths between the optical transition near Eg/rGamma and that near the CB minimum (CBM); (ii) a strong blue shift of the a1(Γ) state with increasing N composition accompanying a red shift of the CBM; (iii) pinning of the energies of the N-related levels; and (iv) the appearance of t2(L) or t2(X3) upon N incorporation of which the energy position is insensitive to N compositions. These findings shed new light on the controversial issue of the dominant mechanism responsible for the giant bandgap bowing of dilute nitrides.
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
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- kon (ämneskategori)
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