Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic resonance study

• A detailed study of as-grown Zn-doped GaN employing optically detected magnetic resonance (ODMR) spectroscopy is presented. Besides the well-known ODMR spectra of an effective-mass-like donor and Zn acceptor, a positive ODMR signal of an S=1 / 2 paramagnetic center was observed when monitoring the dominating blue luminescence band peaking at 2.8 eV. The involvement of a single Ga nucleus in the defect center is revealed from the rather well-resolved hyperfine interactions involving the isotopes 71Ga (39.9%) and 69Ga (60.1%), both with nuclear spin I=3 / 2. The C3v symmetry, the hyperfine interaction and the defect formation suggest a Ga-related complex nature of this center.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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NATURAL SCIENCES

NATURVETENSKAP

Semiconductor physics

Halvledarfysik

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